EXAMINE THIS REPORT ON N TYPE GE

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the construction is cycled as a result of oxidizing and annealing phases. Mainly because of the preferential oxidation of Si in excess of Ge [sixty eight], the original Si1–Crystallographic-orientation agnostic TiO2-